泡沫碳化硅中碳化硅纳米线的原位生长及结构表征*

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摘要利用蛋白质发泡法制备泡沫SiC陶瓷，以聚碳硅烷（PCS）为先驱体，采用化学气相沉积（CVD）工艺在泡沫SiC中原位生长出大量SiC纳米线。使用X射线衍射仪，扫描电子显微镜和透射电子显微镜对纳米线的物相组成和微观形貌进行表征。结果表明，纳米线直径为100~200nm，长度达到数百微米，均匀分布在泡沫SiC的气孔中，纳米线由沿<1 1 1>方向生长的β-SiC晶体组成，在纳米线顶端未发现球状催化剂存在，表明其生长机理主要为气-固（VS）生长机理。

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	高世涛
	余金山
	周新贵
	张长瑞

关键词 ：碳化硅, 纳米线, 泡沫陶瓷, 生长机理

引用本文:

高世涛，余金山，周新贵，张长瑞. 泡沫碳化硅中碳化硅纳米线的原位生长及结构表征*[J]. 航空制造技术, 2014, 57(6): 126-128.

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http://www.amte.net.cn/CN/ 或 http://www.amte.net.cn/CN/Y2014/V57/I6/126

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