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| Development of High-Aspect Ratio Passive MEMS Inertial Switch Based on Electrochemical Deposition Technique |
| DU Liqun1,2, TAO Yousheng1, LI Yuanqi2, QI Leijie1 |
(1. Key Laboratory for Precision and Non-Traditional Machining Technology of the Ministry of Education,
Dalian University of Technology, Dalian 116024, China;
2. Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology,
Dalian 116024, China) |
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Abstract Based on the electrochemical deposition technique, a new passive MEMS inertial switch was fabricated
on a metal substrate. In view of the problems of poor quality caused by the serious lateral erosion of SU-8 in the process
of making high-aspect ratio and fine-line micro electroforming molds, SU-8 UV lithography was studied. The effects of
different exposure dose and PEB (post exposure bake) time on SU-8 UV lithography were studied experimentally, and the
parameters of UV lithography were optimized. By using the method of reducing the exposure dose and prolonging the PEB
time, the problem of poor quality of high-aspectratio and fine-line SU-8 electroforming mold was solved successfully. Finally,
on the basis of the above experimental results, a passive MEMS inertial switch with high-aspect ratio was developed.
The external dimensions are 3935μm×3935μm×234μm, of which the smallest line width is 12μm, the highest aspect ratio
of the single layer is 10∶1, and the highest aspect ratio of the multi-layer is 20∶1.
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2017, 
