三维打印结合化学气相渗透制备Si3N4-SiC复相陶瓷*

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摘要采用三维打印（3DP）技术成型Si3N4多孔陶瓷并结合化学气相渗透（CVI）SiC制备了Si3N4-SiC复相陶瓷。研究了烧结工艺对3DP Si3N4陶瓷线收缩率和孔隙率的影响。结果表明，3DP Si3N4坯体经热解除碳后再烧结，可以获得较小的线收缩率（＜6%）及较大的气孔率（77.5%）。对其进行CVI SiC近尺寸强化，研究了Si3N4-SiC复相陶瓷的抗弯强度随SiC体积分数的变化规律。

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	封立运
	殷小玮
	李向明

关键词 ：三维打印, CVI, Si3N4, SiC

基金资助:*　西北工业大学凝固技术国家重点实验室自主研究课题（No. KB200920）资助项目。

引用本文:

封立运，殷小玮，李向明. 三维打印结合化学气相渗透制备Si3N4-SiC复相陶瓷*[J]. 航空制造技术, 2012, 55(4): 62-65.

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http://www.amte.net.cn/CN/ 或 http://www.amte.net.cn/CN/Y2012/V55/I4/62

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